Datasheet Details
| Part number | 2SD1154 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.03 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1154_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1154 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.03 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1154_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output for B/W TV set.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD1154 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1154 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Voltage Breakdown IC= 10mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
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