| Part number | 2SD1157 |
|---|---|
| Datasheet | 2SD1157_InchangeSemiconductor.pdf |
| File Size | 209.25 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : MAX UNIT 5.0 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1157 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
See all Inchange Semiconductor datasheets
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