2SD1157 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High DC Current Gain- : hFE= 250V(Min.) @IC= 0.5A Low Collector Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regula

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2SD1157 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1157
Manufacturer	Inchange Semiconductor
File Size	209.25 KB
Description	Silicon NPN Power Transistor
Datasheet	2SD1157 Datasheet

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isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 250V(Min.) @IC= 0.