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Inchange Semiconductor
Inchange Semiconductor

2SD1932 Datasheet Preview

2SD1932 Datasheet

Power Transistor

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2SD1932 pdf
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1932
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·High DC Current Gain-
: hFE= 1000(Min)@ (VCE= 3V, IC= 2A)
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
80 V
wwwVCEO Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
4A
ICM Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
6A
2
W
35
150
-55~150
isc Websitewww.iscsemi.cn



Inchange Semiconductor
Inchange Semiconductor

2SD1932 Datasheet Preview

2SD1932 Datasheet

Power Transistor

No Preview Available !

2SD1932 pdf
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1932
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB=B 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
80
80
V
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 4mA
ICBO Collector Cutoff Current
VCB= 80V; IE= 0
1.5 V
100 μA
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
3 mA
hFE DC Current Gain
i.cnCOB Output Capacitance
www.iscsemfT Current-Gain—Bandwidth Product
IC= 2A; VCE= 3V
1000
10000
IE= 0; VCB= 10V; ftest= 1MHz
35 pF
IE= -0.2A; VCE= 5V; ftest= 10MHz
40
MHz
isc Websitewww.iscsemi.cn
2


Part Number 2SD1932
Description Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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2SD1932 pdf
2SD1932 Datasheet PDF
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