Datasheet Summary
isc Silicon NPN Power Transistors
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
- High Power Dissipation-
: PC= 80W(Max)@TC=25℃
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high power amplifier and switching...