Datasheet Details
| Part number | 2SD864 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.15 KB |
| Description | Power Transistor |
| Download | 2SD864 Download (PDF) |
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| Part number | 2SD864 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.15 KB |
| Description | Power Transistor |
| Download | 2SD864 Download (PDF) |
|
|
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·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1.5A ·Complement to Type 2SB765 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium speed and power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 6 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA , IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A, IB=3mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=3A, IB= 30mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1.5A, IB= 3mA VBE(sat)-2 Base-Emitter Saturation Voltage IC=3A, IB= 30mA ICBO Collector Cutoff Current VCB=120V, IE= 0 ICEO Collector Cutoff Current VCE= 100V, RBE= ∞ hFE DC Current Gain IC= 1.5A;
VCE= 3V Switching times ton Turn-on Time tstg Storage Time IC= 1.5A;
isc Silicon NPN Darlington Power Transistor 2SD864.
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