KSD5074 Description
·High Breakdown Voltage- : IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V.
KSD5074 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
NJS |
KSD5074 | Silicon NPN Power Transistor |
·High Breakdown Voltage- : IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V.