KSD5075T Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5075T .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability APPLICATIONS. Electronic ballast applicaition.

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Datasheet Specifications

Part number: KSD5075T
Manufacturer: Inchange Semiconductor
File Size: 129.08 KB
Datasheet: KSD5075T-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Electronic ballast applicaition
* High voltage switching applicaition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage IC Collector Current- Continuous 6V 3.5 A ICP

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KSD5075T Silicon NPN Power Transistor Inchange Semiconductor

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