KSD5075T Overview
·High Breakdown Voltage- : IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V.
KSD5075T Details
| Part number | KSD5075T |
|---|---|
| Datasheet | KSD5075T-InchangeSemiconductor.pdf |
| File Size | 129.08 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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