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KSD5075T - Silicon NPN Power Transistor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Electronic ballast applicaition High voltage switching applicaition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5075T DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Electronic ballast applicaition ·High voltage switching applicaition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage IC Collector Current- Continuous 6V 3.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 10 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.