KTD1945 transistors equivalent, silicon npn power transistors.
*Designed for general purpose application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
C.
*Low Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC= 2A
*High Collector Power Dissipation-
: PC= 25W(Max)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for general purpose a.
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