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6EDL04N06PT - 200V and 600V three-phase gate driver

This page provides the datasheet information for the 6EDL04N06PT, a member of the 6EDL04I06PT 200V and 600V three-phase gate driver family.

Datasheet Summary

Description

The device 6ED family

2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V.

Based on the used SOI-technology there is an excellent ruggedness on transient voltages.

Features

  • Infineon thin-film-SOI-technology.
  • Maximum blocking voltage +600 V.
  • Output source/sink current +0.165 A/-0.375 A.
  • Integrated ultra-fast, low RDS(ON) Bootstrap Diode.
  • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology.
  • Separate control circuits for all six drivers.
  • Detection of over current and under voltage supply.
  • Externally programmable delay for fault clear after over current detection.
  • 'Shut down'.

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Datasheet preview – 6EDL04N06PT

Datasheet Details

Part number 6EDL04N06PT
Manufacturer Infineon
File Size 1.12 MB
Description 200V and 600V three-phase gate driver
Datasheet download datasheet 6EDL04N06PT Datasheet
Additional preview pages of the 6EDL04N06PT datasheet.

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Full PDF Text Transcription

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6EDL04 family 6EDL04x06xT and 6EDL04N02PR family 200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD) Features  Infineon thin-film-SOI-technology  Maximum blocking voltage +600 V  Output source/sink current +0.165 A/-0.
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