AIMBG120R060M1 Silicon Carbide MOSFET
• VDSS = 1200 V at Tvj = -55...175°C
• IDDC = 38 A at TC = 25°C
• RDS(on) = 60 mΩ at VGS = 20 V, Tvj = 25°C
• New performance-optimized chip technology (G.
without coating
• SMT package for automated assembly and reduced system costs
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