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AUIRFU8405 - Power MOSFET

Download the AUIRFU8405 datasheet PDF. This datasheet also covers the AUIRFR8405 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • New Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D 40V 1.65m 1.98m 211A 100A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFR8405-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFU8405 Power MOSFET International Rectifier
AUIRFU8401 Power MOSFET International Rectifier
AUIRFU8401 Power MOSFET International Rectifier
AUIRFU8403 Power MOSFET International Rectifier
AUIRFU024N Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRFU8401 Power MOSFET
AUIRFU8403 Power MOSFET
AUIRFU120Z Power MOSFET
AUIRFU4105Z Power MOSFET
AUIRFU4292 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  AUTOMOTIVE GRADE AUIRFR8405 AUIRFU8405 Features  Advanced Process Technology  New Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D 40V 1.65m 1.98m 211A 100A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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