Datasheet Summary
AUTOMOTIVE GRADE
AUIRFR8405
Features
- Advanced Process Technology
- New Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS pliant
- Automotive Qualified
-
VDSS RDS(on) typ. max.
ID (Silicon Limited) ID (Package Limited)
40V 1.65m 1.98m 211A
100A
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating....
