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Infineon Technologies Electronic Components Datasheet

AUIRFU8405 Datasheet

Power MOSFET

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AUTOMOTIVE GRADE
AUIRFR8405
AUIRFU8405
Features
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
D
D
40V
1.65m
1.98m
211A
100A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET
utilizes the latest processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in Automotive applications and wide variety of other applications.
S
G
D-Pak
AUIRFR8405
S
GD
I-Pak
AUIRFU8405
Applications
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
G
Gate
D
Drain
S
Source
Base part number
Package Type
Standard Pack
Form
Quantity
Orderable Part Number
AUIRFU8405
I-Pak
Tube
75
AUIRFU8405
AUIRFR8405
D-Pak
Tube
Tape and Reel Left
75
3000
AUIRFR8405
AUIRFR8405TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
211
150
100
804
163
1.1
A
W
W/°C
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
± 20
-55 to + 175
300
V
 
°C 
 
Avalanche Characteristics
EAS Single Pulse Avalanche Energy (Thermally Limited)
EAS (tested)
Single Pulse Avalanche Energy (Tested Limited)
IAR Avalanche Current
EAR Repetitive Avalanche Energy
208
256
See Fig. 14, 15, 24a, 24b
mJ
A
mJ
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
–––
Max.
0.92
50
110
Units
°C/W
2015-10-12


Infineon Technologies Electronic Components Datasheet

AUIRFU8405 Datasheet

Power MOSFET

No Preview Available !

  AUIRFR/U8405
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS  
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
40 ––– ––– V VGS = 0V, ID = 250µA
––– 0.03 ––– V/°C Reference to 25°C, ID = 5mA
––– 1.65 1.98 m VGS = 10V, ID = 90A**
2.2 3.0 3.9 V VDS = VGS, ID = 100µA
–––
–––
–––
–––
1.0
150
µA
VDS = 40V, VGS = 0V
VDS = 40V,VGS = 0V,TJ =125°C
–––
–––
––– 100
––– -100
nA  
VGS = 20V
VGS = -20V
––– 2.3 ––– 
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs Forward Trans conductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd
Qsync
td(on)
tr
td(off)
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics  
294 ––– –––
––– 103 155
––– 26 –––
––– 38 –––
––– 65 –––
––– 12 –––
––– 80 –––
––– 51 –––
––– 51 –––
––– 5171 –––
––– 770 –––
––– 523 –––
––– 939 –––
––– 1054 –––
S VDS = 10V, ID = 90A**
ID = 90A**
nC
 
VDS
VGS
=
=
20V
10V
VDD = 26V
ns
ID = 90A**
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 25V
pF   ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ. Max. Units
Conditions
––– 211
––– 804
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– 0.9 1.3 V TJ = 25°C,IS = 90A** ,VGS = 0V 
––– 2.1 ––– V/ns TJ = 175°C,IS = 90A** ,VDS = 40V
–––
–––
–––
–––
28
29
19
20
–––
–––
–––
–––
ns
nC
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 90A**
di/dt = 100A/µs
––– 1.1 ––– A TJ = 25°C
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 100A by source
bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 0.051mH, RG = 50, IAS = 90A, VGS =10V. Part not recommended for use above this value.
ISD 90A, di/dt 1304A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
Ris measured at TJ approximately 90°C.
Pulse drain current is limited by source bonding technology.
** All AC and DC test condition based on old Package limitation current = 90A.
2 2015-10-12


Part Number AUIRFU8405
Description Power MOSFET
Maker Infineon
Total Page 12 Pages
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