BSZ013NE2LS5I - MOSFET

Features

Optimized for high performance buck converters.
Monolithic integrated Schottky-like diode.
Very low on-resistance RDS(on) @ VGS=4.5 V.
100% avalanche tested.
N-channel.
Qualified according to JEDEC1) for target.

BSZ013NE2LS5I mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	BSZ013NE2LS5I
Manufacturer	Infineon
File Size	1.56 MB
Description	MOSFET
Datasheet	BSZ013NE2LS5I Datasheet

📁 Similar Datasheet

Other Datasheets by Infineon

BSZ010NE2LS5 - 25V MOSFET
BSZ011NE2LS5I - 25V MOSFET
BSZ014NE2LS5IF - MOSFET
BSZ017NE2LS5I - MOSFET
BSZ018N04LS6 - MOSFET
BSZ018NE2LS - n-Channel Power MOSFET
BSZ018NE2LSI - Power-Transistor
BSZ019N03LS - n-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-MOSFET,25V BSZ013NE2LS5I DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 1.3 mΩ ID 40 A QOSS 29 nC QG(0V..4.

Published: Feb 25, 2016 |