IPB35N10S3L-26 Description
OptiMOS™-T Power-Transistor.
IPB35N10S3L-26 Key Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- RoHS pliant
- 100% Avalanche tested
- Gate source voltage2)
- Power dissipation
- IEC climatic category; DIN IEC 68-1