Datasheet4U Logo Datasheet4U.com

IPB407N30N - MOSFET

Features

  • N-channel, normal level.
  • Fast Diode with reduced Qrr.
  • Optimized for hard commutation ruggedness.
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB407N30N N-Channel MOSFET INCHANGE
IPB45N04S4L-08 OptiMOS-T2 Power-Transistor Infineon Technologies
IPB45N06S3-16 OptiMOS-T Power-Transistor Infineon Technologies
IPB45N06S3L-13 OptiMOS-T2 Power-Transistor Infineon Technologies
IPB45N06S4-09 OptiMOS-T2 Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IPB009N03L MOSFET
IPB010N06N MOSFET
IPB011N04L Power Transistor
IPB011N04NF2S MOSFET
IPB013N06NF2S 60V MOSFET

Full PDF Text Transcription

Click to expand full text
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,300V IPB407N30N DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •N-channel,normallevel •FastDiodewithreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 300 V RDS(on),max 40.
Published: |