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IPT020N10N3 - MOSFET

Key Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Extremely low on-resistance RDS(on).
  • High current capability.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC 1) for target.

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Full PDF Text Transcription for IPT020N10N3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IPT020N10N3. For precise diagrams, tables, and layout, please refer to the original PDF.

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM3Power-Transistor,100V IPT020N10N3 DataSheet Rev.2....

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V IPT020N10N3 DataSheet Rev.2.