PTFA041501HL Datasheet (Thermally-Enhanced High Power RF LDMOS FETs)

Part: PTFA041501HL
Manufacturer: Infineon (official site)
Size: 445.02 KB

PTFA041501HL Key Features

Average output power = 60 W
Linear Gain = 21 dB
Efficiency = 41% Typical CW performance, 470 MHz, 28 V
Output power at P-1dB = 175 W
Efficiency = 62% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
15°C 25°C 90°C
ACPR ALT
See Infineon distributor for future availability
0.07 2.48

Related Infineon Datasheets

Part Number	Description
PTFA041501E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501F	Thermally-Enhanced High Power RF LDMOS FETs
PTFA041501GL	Thermally-Enhanced High Power RF LDMOS FETs
PTFA043002E	Thermally-Enhanced High Power RF LDMOS FETs
PTFA070601E	Thermally-Enhanced High Power RF LDMOS FETs

PTFA041501HL Description

The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.