Part PTFA091201E
Description Thermally-Enhanced High Power RF LDMOS FETs
Manufacturer Infineon
Size 285.00 KB
Infineon

PTFA091201E Overview

Description

The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.

Key Features

  • Thermally-enhanced packages Broadband internal matching Typical EDGE performance
  • Average output power = 50 W
  • Gain = 19.0 dB
  • Efficiency = 44% Typical CW performance
  • Output power at P–1dB = 135 W
  • Gain = 18.0 dB
  • Modulation Spectrum (dBc)
  • 400 kHz 30 25 20