PTFA091201E - Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Datasheet Details

Part number	PTFA091201E
Manufacturer	Infineon ↗
File Size	285.00 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA091201E_Infineon.pdf

The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz Features.
Thermally-enhanced packages Broadband internal matching Typical EDGE performance - Average output po.

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Published: Aug 6, 2013 |