PTFA091201E Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.
PTFA091201E Key Features
- Thermally-enhanced packages Broadband internal matching Typical EDGE performance
- Average output power = 50 W
- Gain = 19.0 dB
- Efficiency = 44% Typical CW performance
- Output power at P-1dB = 135 W
- Gain = 18.0 dB
- Efficiency = 64% Integrated ESD protection: Human Body Model, Class 2 (minimum) Pb-free and RoHS pliant Excellent therma
- Modulation Spectrum (dBc)
- 400 kHz
- See Infineon distributor for future availability