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PTFA091201F Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

Key Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz Features.
  • Thermally-enhanced packages Broadband internal matching Typical EDGE performance - Average output po.

More Datasheets from Infineon

Part Number Description
PTFA091201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs
PTFA092211EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092211FL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092213EL Thermally-Enhanced High Power RF LDMOS FETs

PTFA091201F Distributor