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PTFA092201F Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.

Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA092201E Package H-36260-2 PTFA092201F Package H-37260-2 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth 60 50 -30

Key Features

  • IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion =.
  • 37 dBc - Adjacent channel power =.
  • 39 dBc Typical CW performance, 960 MHz, 30 V - Output power at P.
  • 1dB = 250 W - Gain = 17.5 dB - Efficiency = 59% Integrated ESD protection: Huma.

More Datasheets from Infineon

Part Number Description
PTFA092201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA092211EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092211FL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092213EL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs

PTFA092201F Distributor