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PTFA092213EL Datasheet Thermally-enhanced High Power Rf Ldmos Fets

Manufacturer: Infineon

Overview: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960.

General Description

The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band.

These devices

Key Features

  • Broadband internal matching.
  • Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 50 W - Linear Gain = 17.5 dB - Efficiency = 29% - Intermodulation distortion =.
  • 32 dBc - Adjacent channel power =.
  • 42.5 dBc.
  • Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 250 W - Linear Gain = 17.5 dB - Efficiency = 52%.
  • Integrated ESD protection: Human Body Model, Class 2 (minimum).
  • Excellent thermal stab.

More Datasheets from Infineon

Part Number Description
PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs
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PTFA092211FL Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201E Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201GL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091201HL Thermally-Enhanced High Power RF LDMOS FETs
PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs

PTFA092213EL Distributor