PTFA210301E Datasheet | Infineon

Description The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA210301E Package H-30265-2 IM3 (d Bc), ACPR (d Bc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 300 m A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 d B, 10 MHz carrier spacing -25 30 IM3 Efficiency -30 25 -35 IM3 Up -40 IM3 Low 20 15 -45 10 ACPR -50 5 -55 27 29 31 33 35 37 39 Average Output Power (d Bm) 0 41 Features - Thermally-enhanced packaging, Pb-free and Ro HS-pliant - Broadband internal matching - Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 33 d Bm - Linear Gain = 16.5 d B - Intermodulation distortion = - 50 d Bc - Adjacent channel power = - 52 d Bc - Typical CW performance, 2170 MHz, 28 V - Output power at P- 1d B = 40 W - Efficiency = 59% - Integrated ESD protection: Human Body Model, Class 2 (minimum) - Excellent thermal stability, low HCI drift - Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power RF Characteristics 2-Carrier WCDMA Measurements (not subject to production test- verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 300 m A, POUT = 8 W average f1 = 2135 MHz, f2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 d B @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps - 17 - d B Drain...