logo

PTFA210601F Datasheet, Infineon

PTFA210601F fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA210601F Avg. rating / M : 1.0 rating-15

datasheet Download

PTFA210601F Datasheet

Features and benefits

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.

Application

in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted o.

Image gallery

PTFA210601F Page 1 PTFA210601F Page 2 PTFA210601F Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts