PTFA210701E Datasheet | Infineon

Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210701E Package H-36265-2 PTFA210701F Package H-37265-2 IM3 (d Bc), ACPR (d Bc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 550 m A, ƒ = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 d B, 10 MHz carrier spacing -30 35 -35 Efficiency -40 IM3 -45 -50 ACPR 30 25 20 15 -55 10 -60 30 32 34 36 38 40 42 Average Output Power (d Bm) 5 44 Features - Thermally-enhanced packages, Pb-free and Ro HS-pliant - Broadband internal matching - Typical two-carrier WCDMA performance at 2140 MHz, 30 V - Average output power = 42 d Bm - Linear Gain = 16.5 d B - Efficiency = 27.0% - Intermodulation distortion = - 37 d Bc - Adjacent channel power = - 42.5 d Bc - Typical CW performance, 2170 MHz, 30 V - Output power at P- 1d B = 80 W - Efficiency = 58% - Integrated ESD protection: Human Body Model, Class 2 (minimum) - Excellent thermal stability, low HCI drift - Capable of handling 10:1 VSWR @ 30 V, 70 W (CW) output power RF Characteristics WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 550 m A, POUT = 18 W average ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 d B @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Drain Efficiency Intermodulation...