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PTFA210701E - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band.

Features

  • include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210701E Package H-36265-2 PTFA210701F Package H-37265-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 550 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -30 35 -35 Efficiency -40 IM3 -45 -50.

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Datasheet Details

Part number PTFA210701E
Manufacturer Infineon
File Size 375.96 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA210701E Datasheet

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Full PDF Text Transcription

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Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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