• Part: PTFA211001E
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 213.18 KB
Download PTFA211001E Datasheet PDF
Infineon
PTFA211001E
PTFA211001E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA211001E Package H-30248-2 IM3 (d Bc), ACPR (d Bc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 m A, ƒ = 2140 MHz, 3GPP WCDMA signal, 8 d B P/A R, 10 MHz carrier spacing -28 -31 -34 -37 -40 -43 -46 -49 -52 -55 IM3 Up Ef f iciency ACPR 38 40 42 44 Average Output Power (d Bm) 36 32 28 24 20 16 12 8 4 0 46 RF Characteristics Features - Thermally-enhanced package, Pb-free and Ro HSpliant - Broadband internal matching - Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 23 W - Linear Gain = 16 d B - Efficiency = 28.5% - Intermodulation distortion = - 37 d Bc - Adjacent channel power = - 41 d Bc - Typical CW performance, 2170 MHz, 28 V - Output power at P- 1d B = 125 W - Efficiency = 57% - Integrated ESD protection: Human Body Model, Class 2 (minimum) - Excellent thermal stability, low HCI drift - Capable of handling 10:1 VSWR @ 28 V, 100 W (CW) output power WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 900 m A, POUT = 23 W average ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 d B @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Drain Efficiency Intermodulation Distortion Gps ηD IMD 15 16 27 28.5 - - 37 - - - 36 d B % d Bc All published data at TCASE = 25°C unless otherwise...