PTFA211001E - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTFA211001E
Manufacturer	Infineon ↗
File Size	213.18 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA211001E-Infineon.pdf

The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications.

Thermally-enhanced package, Pb-free and RoHScompliant.
Broadband internal matching.
Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 23 W - Linear Gain = 16 dB - Efficiency = 28.5% - Intermodulation distortion =.
37 dBc - Adjacent channel power =.
41 dBc.
Typical CW performance, 2170 MHz, 28 V - Output power at P.
1dB = 125 W - Efficiency = 57%.
Integrated ESD protection: Human Body Model, Class.

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Published: Feb 21, 2016 |