PTFA211001E
PTFA211001E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description
The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
PTFA211001E Package H-30248-2
IM3 (d Bc), ACPR (d Bc) Drain Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 m A, ƒ = 2140 MHz, 3GPP WCDMA signal, 8 d B P/A R, 10 MHz carrier spacing
-28 -31 -34 -37 -40 -43 -46 -49 -52 -55
IM3 Up
Ef f iciency
ACPR
38 40 42 44 Average Output Power (d Bm)
36 32 28 24 20 16 12 8 4 0 46
RF Characteristics
Features
- Thermally-enhanced package, Pb-free and Ro HSpliant
- Broadband internal matching
- Typical two-carrier WCDMA performance at 2140 MHz, 28 V
- Average output power = 23 W
- Linear Gain = 16 d B
- Efficiency = 28.5%
- Intermodulation distortion =
- 37 d Bc
- Adjacent channel power =
- 41 d Bc
- Typical CW performance, 2170 MHz, 28 V
- Output power at P- 1d B = 125 W
- Efficiency = 57%
- Integrated ESD protection: Human Body Model, Class 2 (minimum)
- Excellent thermal stability, low HCI drift
- Capable of handling 10:1 VSWR @ 28 V, 100 W (CW) output power
WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 900 m A, POUT = 23 W average ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 d B @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain Drain Efficiency Intermodulation Distortion
Gps ηD IMD
15 16 27 28.5
- - 37
- -
- 36 d B % d Bc
All published data at TCASE = 25°C unless otherwise...