PTFA211801E
PTFA211801E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description
The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFA211801E Package H-36260-2
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2 A, ƒ = 2140 MHz,
3GPP WCDMA signal, PAR = 8 d B, 10 MHz carrier spacing
-25 30
-30
Efficiency
-35 IM3
-40
20 15
-45 10
-50
ACPR
-55 34
36 38 40 42 44 46 Average Output Power (d Bm)
0 48
Features
- Broadband internal matching
- Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 d Bm
- Linear Gain = 15.5 d B
- Efficiency = 27.5%
- Intermodulation distortion =
- 36 d Bc
- Adjacent channel power =
- 41 d Bc
- Typical CW performance, 2170 MHz, 30 V
- Output power at P1d B = 180 W
- Efficiency = 52%
- Integrated ESD protection
- Excellent thermal stability, low HCI drift
- Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power
- Pb-free and Ro HS-pliant
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 d B @ 0.01% CCDF
Characteristic Gain Drain Efficiency Intermodulation...
