PTFA212401E
PTFA212401E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description
The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA212401E Package H-36260-2
PTFA212401F Package H-37260-2
PTFA212401E PTFA212401F
Adjacent Channel Power Ratio (d B) Drain Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 m A, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 d B, 3.84 MHz BW -30
-35 ACPR Up
-40
-45 ACPR Low
30 25 20
-50 15
-55
-60 36
Efficiency
38 40 42 44 46 Average Output Power (d Bm)
5 48
Features
- Thermally-enhanced packages, Pb-free and Ro HS pliant
- Broadband internal matching
- Typical two-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8 d B
- Average output power = 47.0 d Bm
- Linear Gain = 15.8 d B
- Efficiency = 28%
- Intermodulation distortion =
- 35 d Bc
- Adjacent channel power =
- 40 d Bc
- Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8.5 d B
- Average output power = 49 d Bm
- Linear Gain = 15.8 d B
- Efficiency = 34%
- Adjacent channel power =
- 33 d Bc
- Typical CW performance, 2140 MHz, 30 V
- Output power at P- 1d B = 240 W
- Efficiency =...
