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PTFA240451E - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS® FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Full gold metallization ensures excellent device lifetime and reliability.

Features

  • Thermally-enhanced, lead-free and RoHS-compliant packaging.
  • Broadband internal matching.
  • Typical two-carrier CDMA performance at 2450 MHz, 28 V - Average output power = 10 W - Linear Gain = 14 dB - Efficiency = 27% - Adjacent channel power =.
  • 45 dBc.
  • Typical CW performance, 2450 MHz, 28 V - Output power at P.
  • 1dB = 50 W - Efficiency = 54%.
  • Integrated ESD protection: Human Body Model, Class 2 (minimum).
  • Excellent thermal stabil.

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Datasheet Details

Part number PTFA240451E
Manufacturer Infineon
File Size 186.72 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA240451E Datasheet

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Full PDF Text Transcription

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PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz Description The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS® FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA240451E Package H-30265-2 Drain Efficiency (%) Adj. Ch. Power Ratio (dBc) Three-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz 45 40 35 30 25 20 15 10 5 0 30 Efficiency ACP Up ACP Low ALT Up -38 -42 -46 -50 -54 -58 -62 Efficiency -66 -70 -74 32 34 36 38 40 42 Output Power, Avg.
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