PTFA240451E
PTFA240451E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description
The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS® FET intended for CDMA2000 and Wi MAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
PTFA240451E Package H-30265-2
Drain Efficiency (%) Adj. Ch. Power Ratio (d Bc)
Three-Carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 m A, ƒ = 2450 MHz
45 40 35 30 25 20 15 10
5 0
Efficiency ACP Up ACP Low ALT Up
-38 -42 -46
-50
-54
-58
-62
Efficiency -66
-70
-74 32 34 36 38 40 42
Output Power, Avg. (d Bm)
Features
- Thermally-enhanced, lead-free and
Ro HS-pliant packaging
- Broadband internal matching
- Typical two-carrier CDMA performance at 2450 MHz, 28 V
- Average output power = 10 W
- Linear Gain = 14 d B
- Efficiency = 27%
- Adjacent channel power =
- 45 d Bc
- Typical CW performance, 2450 MHz, 28 V
- Output power at P- 1d B = 50 W
- Efficiency = 54%
- Integrated ESD protection: Human Body Model, Class 2 (minimum)
- Excellent thermal stability, low HCI drift
- Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power
RF Characteristics
3-Carrier CDMA2000 Measurements (not subject to production test- verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 450 m A, POUT = 14 W average, ƒ = 2450 MHz, channel bandwidth = 3.75 MHz; ACPR measured in 30 k Hz bandwidth at ƒC ± 2.135 MHz offset
Characteristic
Symbol Min Typ Max Unit
Gain Drain Efficiency Adjacent Channel Power...
