PTFA241301E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 * 2480 MHz .
The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications.

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Datasheet Specifications

Part number: PTFA241301E
Manufacturer: Infineon ↗
File Size: 237.18 KB
Datasheet: PTFA241301E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* Thermally-enhanced packaging, Pb-free and RoHS-compliant
* Broadband internal matching
* Typical CDMA2000 performance at 2450 MHz - Average output power = 25 W - Linear Gain = 14 dB - Efficiency = 25%
* Typical CW performance, 2420 MHz, 28 V - Output power at P

Applications

* They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to 2480 MHz. Full gold metallization ensures excellent device lifetime and reliability. PTFA241301E Package H-30260-2 PTFA241301F Package H-31260-2 Drain Efficiency (%) Adj. Ch. Power Ratio (dBc) Thr

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PTFA241301E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA241301E-like datasheet