PTFA241301E
PTFA241301E is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description
The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and Wi MAX operation from 2420 to 2480 MHz. Full gold metallization ensures excellent device lifetime and reliability.
PTFA241301E Package H-30260-2
PTFA241301F Package H-31260-2
Drain Efficiency (%) Adj. Ch. Power Ratio (d Bc)
Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 1150 m A, ƒ = 2450 MHz
45 40 ACP Up
-40 -45
35 ACP Low
-50 -55
25 -60
20 -65 Efficiency
ALT Up
-70
10 -75
5 -80 36 38 40 42 44 46 48
Output Power, Avg. (d Bm)
Features
- Thermally-enhanced packaging, Pb-free and Ro HS-pliant
- Broadband internal matching
- Typical CDMA2000 performance at 2450 MHz
- Average output power = 25 W
- Linear Gain = 14 d B
- Efficiency = 25%
- Typical CW performance, 2420 MHz, 28 V
- Output power at P- 1d B = 140 W
- Efficiency = 50%
- Integrated ESD protection: Human Body Model, Class 2 (minimum)
- Excellent thermal stability, low HCI drift
- Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power
RF Characteristics
Three-carrier CDMA2000 Measurements (not subject to production test- verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 1150 m A, POUT = 25 W average, ƒ = 2450 MHz
Characteristic
Symbol Min Typ Max Unit
Gain Drain Efficiency
Gps
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