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Infineon Technologies Electronic Components Datasheet

PTVA030121EA Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTVA030121EA
Thermally-Enhanced High Power RF LDMOS FET
12 W, 50 V, 390 – 450 MHz
Description
The PTVA030121EA is an LDMOS FET characterized for use in
power amplifier applications in the 390 MHz to 450 MHz frequency
band. Features include high gain and a thermally-enhanced package.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTVA030121EA
Package H-36265-2
CW Power Sweep
VDD = 50 V, IDQ = 30 mA, ƒ = 450 MHz
28
26 Gain
24
22
20
18
16
14
31
Efficiency
33 35 37 39
Output Power (dBm)
41
90
80
70
60
50
40
30
3-1 20
43
Features
Unmatched input and output
Integrated ESD protection
Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
High gain, low thermal resistance
Excellent ruggedness
Capable of withstanding a 13:1 load mismatch at
50 V, 12 W, CW conditions
Pb-free and RoHS compliant
RF Characteristics
CW Measurements
VDD = 50 V, IDQ = 50 mA, POUT = 12 W, ƒ = 450 MHz
Characteristic
Gain
Drain Efficiency
Symbol
Gps
hD
Min
23
66
Typ
25
69
Max
Unit
dB
%
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 05.1, 2016-04-19


Infineon Technologies Electronic Components Datasheet

PTVA030121EA Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTVA030121EA
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 1 mA
VDS = 50 V, VGS = 0 V
VDS = 105 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 50 V, IDQ = 50 mA
VGS = 10 V, VDS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE 70°C, 12 W CW)
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
105
Typ
2.8
3.6
Max
1.0
10.0
1.0
Unit
V
µA
µA
W
V
µA
Symbol Value
VDSS
VGS
TJ
TSTG
RqJC
105
–6 to +12
200
–65 to +150
6.5
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTVA030121EA V1 R0
PTVA030121EA V1 R250
Order Code
PTVA030121EAV1R0XTMA1
PTVA030121EAV1R250XTMA1
Package and Description
H-36265-2, bolt-down
H-36265-2, bolt-down
Shipping
Tape & Reel, 50pcs
Tape & Reel, 250pcs
Data Sheet
2 of 10
Rev. 05.1, 2016-04-19


Part Number PTVA030121EA
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
Total Page 10 Pages
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