• Part: PTVA030121EA
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 313.61 KB
Download PTVA030121EA Datasheet PDF
Infineon
PTVA030121EA
PTVA030121EA is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 - 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA030121EA Package H-36265-2 Gain (d B) Drain Efficiency (%) CW Power Sweep VDD = 50 V, IDQ = 30 m A, ƒ = 450 MHz 26 Gain 24 14 31 Efficiency 33 35 37 39 Output Power (d Bm) 90 80 70 60 50 40 30 3-1 20 43 Features - Unmatched input and output - Integrated ESD protection - Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-001) - High gain, low thermal resistance - Excellent ruggedness - Capable of withstanding a 13:1 load mismatch at 50 V, 12 W, CW conditions - Pb-free and Ro HS pliant RF Characteristics CW...