PTVA030121EA - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

The PTVA030121EA is an.

include high gain and a thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA030121EA Package H-36265-2 Gain (dB) Drain Efficiency (%) CW Power Sweep VDD = 50 V, IDQ = 30 mA, ƒ = 450 MHz 28 26 Gain 24 22 20 18 16 14 31 Efficiency 33 35 37 39 Output Power (dBm) 41 90 80 70 60 50 40 30 3-1 20 43 Features.
Unmatched input and output.
Integrated ESD protecti.

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