PXAC182908FV fet equivalent, thermally-enhanced high power rf ldmos fet.
include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, t.
in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and ther.
The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high g.
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