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PXAC182908FV
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 – 1880 MHz
Description
The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC182908FV Package H-37275G-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1880 MHz,
3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW
24 60
Efficiency
20 40
16 20
Gain
12 0
8 PAR @ 0.
PXAC182908FV Datasheet
