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PTFA190451E

Manufacturer: Infineon
PTFA190451E datasheet preview

Datasheet Details

Part number PTFA190451E
Datasheet PTFA190451E_InfineonTechnologies.pdf
File Size 386.25 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFA190451E page 2 PTFA190451E page 3

PTFA190451E Overview

The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band. These devices are available in thermally-enhanced packages with eared or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA190451E Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V
  • Average output power = 11 W
  • Linear gain = 17.5 dB
  • Efficiency = 28.0%
  • Intermodulation distortion = -39 dBc
  • Adjacent channel power = -42 dBc Typical CW performance, 1960 MHz, 28 V
  • Output power at P-1dB = 60 W
  • Efficiency = 60% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI dri
  • 30 -35 -40 -45 -50 -55 30 32 34 36
  • See Infineon distributor for future availability
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