PTFA190451E Datasheet | Infineon

PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz ..net Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band. These devices are available in thermally-enhanced packages with eared or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA190451E Package H-36265-2 PTFA190451F Package H-37265-2 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 450 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -25 35 Features - - Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion = - 39 dBc - Adjacent channel power = - 42 dBc Typical CW performance, 1960 MHz, 28 V - Output power at P- 1dB = 60 W - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power Pb-free and RoHS pliant IM3 (dBc), ACPR (dBc) -30 -35 -40 -45 -50 -55 30 32 34 36 Efficiency IM3 30 25 20 15 Drain Efficiency (%) - ACPR - - - - ...