Datasheet Details
| Part number | PTFA190451E |
|---|---|
| Manufacturer | Infineon |
| File Size | 386.25 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTFA190451E Datasheet
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General Description
The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band.
These devices are available in thermally-enhanced packages with eared or earless flanges.
Key Features
- Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion =.
- 39 dBc - Adjacent channel power =.
- 42 dBc Typical CW performance, 1960 MHz, 28 V - Output power at P.
- 1dB = 60 W - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSW.