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Infineon Technologies Electronic Components Datasheet

BF1005SR Datasheet

Silicon N-Channel MOSFET Tetrode

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Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1 GHz
Operating voltage 5 V
Integrated biasing network
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BF1005S...
AGC
RF
Input
Drain RF Output
G2 + DC
G1
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF1005S
SOT143 1=S 2=D 3=G2 4=G1 -
-
BF1005SR
SOT143R 1=D 2=S 3=G1 4=G2 -
-
Marking
NZs
NZs
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS 76 °C
Storage temperature
Channel temperature
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
8
25
10
3
200
-55 ... 150
150
V
mA
V
mW
°C
1Pb-containing package may be available upon special request
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 2007-04-20


Infineon Technologies Electronic Components Datasheet

BF1005SR Datasheet

Silicon N-Channel MOSFET Tetrode

No Preview Available !

BF1005S...
Thermal Resistance
Parameter
Channel - soldering point1)
Symbol
Rthchs
Value
370
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 650 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 , VDS = 0
Gate2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 , VDS = 0
Gate1-source leakage current
VG1S = 6 V, VG2S = 0
Gate 2 source leakage current
±VG2S = 8 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Operating current (selfbiased)
VDS = 5 V, VG2S = 4 V
Gate2-source pinch-off voltage
VDS = 5 V, ID = 100 µA
V(BR)DS
12 -
-V
+V(BR)G1SS 8
- 12
±V(BR)G2SS 8
- 13
+IG1SS
- 100 - µA
±IG2SS
- - 50 nA
IDSS
- - 800 µA
IDSO
8 13 16 mA
VG2S(p)
- 1 -V
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 2007-04-20


Part Number BF1005SR
Description Silicon N-Channel MOSFET Tetrode
Maker Infineon Technologies AG
Total Page 8 Pages
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