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Siemens Electronic Components Datasheet

BF1009S Datasheet

Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)

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Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1GHz
Operating voltage 9V
Integrated bias network
BF 1009S
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BF 1009S JLs
Q62702-F1628 1 = S 2 = D 3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, TS 76 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Rthchs
Value
12
25
10
3
200
-55 ...+150
150
370
Unit
V
mA
V
mW
°C
K/W
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
SSeemmicioconndduuctcotor rGGrorouupp
11
Au 1-29958-1-1919-081



Siemens Electronic Components Datasheet

BF1009S Datasheet

Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)

No Preview Available !

BF 1009S
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Drain-source breakdown voltage
ID = 300 µA, -VG1S = 4 V, - VG2S = 4 V
Gate 1 source breakdown voltage
±IG1S = 10 mA, VG2S = VDS = 0
Gate 2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 V, VDS = 0 V
Gate 1 source current
VG1S = 6 V, VG2S = 0 V
Gate 2 source leakage current
±VG2S = 8 V, VG1S = 0 V, VDS = 0 V
Drain current
VDS = 9 V, VG1S = 0 , VG2S = 6 V
Operating current (selfbiased)
VDS = 9 V, VG2S = 6 V
Gate 2-source pinch-off voltage
VDS = 9 V, ID = 100 µA
V(BR)DS
16 -
-V
±V(BR)G1SS 8
- 12
±V(BR)G2SS 10 - 16
+IG1SS
- - 60 µA
±IG2SS
- - 50 nA
IDSS
- - 500 µA
IDSO
10 14 19 mA
VG2S(p)
- 0.9 - V
AC characteristics
Forward transconductance (self biased)
VDS = 9 V, VG2S = 6 V, f = 1 kHz
Gate 1-input capacitance (self biased)
VDS = 9 V, VG2S = 6 V, f = 1 MHz
Output capacitance (self biased)
VDS = 9 V, VG2S = 6 V, f = 100 MHz
Power gain (self biased)
VDS = 9 V, VG2S = 6 V, f = 800 MHz
Noise figure (self biased)
VDS = 9 V, VG2S = 6 V, f = 800 MHz
Gain control range (self biased)
VDS = 9 V, VG2S = 1 V, f = 800 MHz
gfs
Cg1ss
Cdss
Gps
F800
Gps
26 30
- mS
- 2.1 2.7 pF
- 0.9 -
18 22
- dB
- 1.4 -
40 50
-
SSeemmicioconndduuctcotor rGGrorouupp
22
Au 1-29958-1-1919-081


Part Number BF1009S
Description Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
Maker Siemens Semiconductor Group
Total Page 4 Pages
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