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Infineon Technologies Electronic Components Datasheet

BF1005W Datasheet

Silicon N-Channel MOSFET Tetrode

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BF1005...
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1 GHz
Operating voltage 5V
Integrated biasing network
AGC G2
HF G1
Input
Drain HF Output
+ DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF1005
BF1005R
BF1005W*
Package
SOT143
SOT143R
SOT343
1=S
1=D
1=D
Pin Configuration
2=D 3=G2 4=G1 -
2=S 3=G1 4=G2 -
2=S 3=G1 4=G2 -
-
-
-
* on request only
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
TS 76 °C, BF1005, BF1005R
TS 94 °C, BF1005W
Storage temperature
Channel temperature
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Value
8
25
10
3
200
200
-55 ... 150
150
Marking
MZs
MZs
MZ
Unit
V
mA
V
mW
°C
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 Feb-18-2004


Infineon Technologies Electronic Components Datasheet

BF1005W Datasheet

Silicon N-Channel MOSFET Tetrode

No Preview Available !

Thermal Resistance
Parameter
Channel - soldering point1)
BF1005, BF1005R
BF1005W
Symbol
Rthchs
BF1005...
Value
370
280
Unit
K/W
Electrical Characteristics
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
ID = 650 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 , VDS = 0
Gate2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 , VDS = 0
Gate1-source leakage current
VG1S = 0 , VG2S = 6 V
Gate 2 source leakage current
±VG2S = 8 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Operating current (selfbiased)
VDS = 5 V, VG2S = 4 V
Gate2-source pinch-off voltage
VDS = 5 V, ID = 100 µA
V(BR)DS
12 -
-V
+V(BR)G1SS 8
- 12
±V(BR)G2SS 8
- 13
+IG1SS
- 100 - µA
±IG2SS
- - 50 nA
IDSS
- - 1.5 mA
IDSO
8 10 16
VG2S(p)
- 1 -V
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 Feb-18-2004


Part Number BF1005W
Description Silicon N-Channel MOSFET Tetrode
Maker Infineon Technologies AG
Total Page 5 Pages
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