- Part: MQ1270VP
- Description: High Power RF LDMOS FET
- Manufacturer: Innogration
- Size: 508.70 KB
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MQ1270VP Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- Excellent thermal stability, low HCI drift
- pliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
- 10 to +10
- 65 to +150
Related Innogration Datasheets
| Part Number |
Description |
|
MQ1080VP
|
High Power RF LDMOS FET |
|
MQ1090VP
|
High Power RF LDMOS FET |
|
MQ1470VP
|
High Power RF LDMOS FET |