 Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low gate charge, low output charge  Qualified for.

according to JEDEC Standards  ESD safeguard  RoHS, Pb-free, REACH-compliant DD D D DD D D 1 3. Applications  AC-DC .

650V GaN-on-silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 5 mm × 6 mm size 2. Features  Enhancement mode transistor-Normally off power switch  Ultra high switching frequency  No reverse-recovery charge  Low ga.

INN650D150A

INN150FQ032A

INN2003

INN2004

INN2005

INN2023

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INN2103K

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INN2123K

INN2124K