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InterFET

N0014L Datasheet Preview

N0014L Datasheet

Process Geometry

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N0014L
N0014L Process Geometry
Features
Low Input Capacitance: 2.3pF Typical
Low Gate Leakage: 2.0pA Typical
High Breakdown Voltage: -30V Typical
High Input Impedance
Small Die: 365um X 365um X 203um
Bond Pads: 90um X 90um and 66um Dia.
Substrate Connected to Gate
Au Back Side Finish
Applications
Small Signal Amplifiers
Audio Amplifiers
Low Noise High Gain Amplifier
RF Amplifiers
Custom Part Options
Description
The InterFET N0014L Geometry is targeted for low
noise high gain amplifier applications. The low
input capacitance makes it ideal for higher
frequency applications.
Geometry Top View
14
G
S-D
S-D
G
Test
Pattern
Standard Parts
IF140, IF140A
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
GFS
Forward Transconductance
Min
Typ
Max
Unit
-15
-30
V
0.5
10
20
mA
-0.5
-7
V
4.0
mS
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters
Min
Typ
Max
Unit
VRGS Reverse Gate to Source or Drain Voltage
-15
-30
V
IFG Continuous Forward Gate Current
10
mA
TJ Operating Junction Temperature
-55
150
°C
TSTG Storage Temperature
-65
175
°C
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and
extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and
security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35502.R01




InterFET

N0014L Datasheet Preview

N0014L Datasheet

Process Geometry

No Preview Available !

InterFET
Product
Folder
Technical
Support
Order
Now
Electrical Characteristics
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
Parameters
Conditions
Min
Typ
BVGSS
Gate to Source
Breakdown Voltage
IG = -1μA, VDS = 0V
-15
-30
IGSS
Gate to Source
Reverse Current
VGS = -10V, VDS = 0V
-2
VGS(OFF)
Gate to Source
Cutoff Voltage
VDS = 10V, ID = 1nA
-0.5
IDSS
Drain to Source
Saturation Current
VDS = 10V, VGS = 0V
0.5
10
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
Parameters
Conditions
Min
Typ
GFS
Forward
Transconductance
VDS = 10V, VGS = 0V,
f = 1kHz
4.0
Ciss Input Capacitance
VDS = 15V, VGS = 0V,
f = 1MHz
2.3
Crss
Reverse Transfer
Capacitance
VDS = 15V, VGS = 0V,
f = 1MHz
0.5
en Noise Voltage
VDS = 10V, ID = 0.5mA
f = 1kHz
4
N0014L
Max
Unit
V
-100
pA
-7
V
20
mA
Max
Unit
mS
pF
pF
nV/Hz
N0014L
Document Number: IF35502.R01
2 of 5
www.InterFET.com
InterFET Corporation
November, 2019


Part Number N0014L
Description Process Geometry
Maker InterFET
Total Page 3 Pages
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