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N0014L - Process Geometry

Description

The InterFET N0014L Geometry is targeted for low noise high gain amplifier applications.

The low input capacitance makes it ideal for higher frequency applications.

IF140, IF140A Product Summary Parameters BVGSS Gate t

Features

  • Low Input Capacitance: 2.3pF Typical.
  • Low Gate Leakage: 2.0pA Typical.
  • High Breakdown Voltage: -30V Typical.
  • High Input Impedance.
  • Small Die: 365um X 365um X 203um.
  • Bond Pads: 90um X 90um and 66um Dia.
  • Substrate Connected to Gate.
  • Au Back Side Finish.

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Datasheet Details

Part number N0014L
Manufacturer InterFET
File Size 877.32 KB
Description Process Geometry
Datasheet download datasheet N0014L Datasheet

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Full PDF Text Transcription

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InterFET Product Folder Technical Support Order Now N0014L N0014L Process Geometry Features • Low Input Capacitance: 2.3pF Typical • Low Gate Leakage: 2.0pA Typical • High Breakdown Voltage: -30V Typical • High Input Impedance • Small Die: 365um X 365um X 203um • Bond Pads: 90um X 90um and 66um Dia. • Substrate Connected to Gate • Au Back Side Finish Applications • Small Signal Amplifiers • Audio Amplifiers • Low Noise High Gain Amplifier • RF Amplifiers • Custom Part Options Description The InterFET N0014L Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications.
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