Datasheet Summary
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N0014L Process Geometry
Features
- Low Input Capacitance: 2.3pF Typical
- Low Gate Leakage: 2.0pA Typical
- High Breakdown Voltage: -30V Typical
- High Input Impedance
- Small Die: 365um X 365um X 203um
- Bond Pads: 90um X 90um and 66um Dia.
- Substrate Connected to Gate
- Au Back Side Finish
Applications
- Small Signal Amplifiers
- Audio Amplifiers
- Low Noise High Gain Amplifier
- RF Amplifiers
- Custom Part Options
Description
The InterFET N0014L Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications.
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