900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






InterFET

N0016H Datasheet Preview

N0016H Datasheet

Process Geometry

No Preview Available !

InterFET
Product
Folder
Technical
Support
Order
Now
N0016H
N0016H Process Geometry
Features
Low Input Capacitance: 3.5pF Typical
Low Gate Leakage: 10pA Typical
High Breakdown Voltage: -60V Typical
High Input Impedance
Small Die: 391um X 391um X 203um
Bond Pads: 90um X 90um
Substrate Connected to Gate
Au Back Side Finish
Applications
Small Signal Amplifiers
Audio Amplifiers
VCR’s
Current Limiters and Regulators
Custom Part Options
Description
The InterFET N0016H Geometry is targeted for
general purpose amplifiers, current limiters,
regulators, and VCR applications. The low input
capacitance makes it ideal for mid-frequency
applications.
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
GFS
Forward Transconductance
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters
VRGS Reverse Gate to Source or Drain Voltage
IFG Continuous Forward Gate Current
TJ Operating Junction Temperature
TSTG Storage Temperature
Geometry Top View
16
G
S-D
S-D
G
Test
Pattern
Standard Parts
2N3954, 2N3955, 2N3956
2N3957, 2N3958
2N4220/A, 2N4221/A, 2N4222/A
2N4338, 2N4339
2N4340, 2N4341
2N4867/A, 2N4868/A, 2N4869/A
2SK17, 2SK40
2SK59, 2SK105
IFN17, IFN40
IFN59, IFN105
J201, J202, J203, J204
J230, J231, J232
J500, J501, J502, J503, J504, J505
J506, J507, J508, J509, J510, J511
J553, J554, J555, J556, J557
U553, U554, U555, U556, U557
VCR4N
Min
Typ
Max
Unit
-50
-60
V
0.2
9
mA
-0.8
-5.5
V
2200
μS
Min
Typ
Max
Unit
-50
-60
V
10
mA
-55
150
°C
-65
175
°C
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and
extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and
security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35504.R01




InterFET

N0016H Datasheet Preview

N0016H Datasheet

Process Geometry

No Preview Available !

InterFET
Product
Folder
Technical
Support
Order
Now
Electrical Characteristics
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
Parameters
Conditions
Min
Typ
BVGSS
Gate to Source
Breakdown Voltage
IG = -1μA, VDS = 0V
-50
-60
IGSS
Gate to Source
Reverse Current
VGS = -30V, VDS = 0V
-10
VGS(OFF)
Gate to Source
Cutoff Voltage
VDS = 15V, ID = 1nA
-0.8
IDSS
Drain to Source
Saturation Current
VDS = 15V, VGS = 0V
0.2
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
Parameters
Conditions
Min
GFS
Forward
Transconductance
VDS = 15V, VGS = 0 V,
f = 1kHz
Ciss Input Capacitance
VDS = 15V, VGS = 0 V,
f = 1MHz
Crss
Reverse Transfer
Capacitance
VDS = 15V, VGS = 0 V,
f = 1MHz
en Noise Voltage
VDS = 10V, ID = 0.2mA
f = 1kHz
Typ
2200
3.5
1.2
4.2
N0016H
Max
Unit
V
-100
pA
-5.5
V
9
mA
Max
Unit
μS
pF
pF
nV/Hz
N0016H
Document Number: IF35504.R01
2 of 5
www.InterFET.com
InterFET Corporation
November, 2019


Part Number N0016H
Description Process Geometry
Maker InterFET
Total Page 3 Pages
PDF Download

N0016H Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 N0016H Process Geometry
InterFET





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy