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N0016H Datasheet - InterFET

Process Geometry

N0016H Features

* Low Input Capacitance: 3.5pF Typical

* Low Gate Leakage: 10pA Typical

* High Breakdown Voltage: -60V Typical

* High Input Impedance

* Small Die: 391um X 391um X 203um

* Bond Pads: 90um X 90um

* Substrate Connected to Gate

* Au Back Si

N0016H General Description

The InterFET N0016H Geometry is targeted for general purpose amplifiers, current limiters, regulators, and VCR applications. The low input capacitance makes it ideal for mid-frequency applications. Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation.

N0016H Datasheet (876.21 KB)

Preview of N0016H PDF

Datasheet Details

Part number:

N0016H

Manufacturer:

InterFET

File Size:

876.21 KB

Description:

Process geometry.

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TAGS

N0016H Process Geometry InterFET

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