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N0016H - Process Geometry

Datasheet Details

Part number N0016H
Manufacturer InterFET
File Size 876.21 KB
Description Process Geometry
Datasheet download datasheet N0016H Datasheet

General Description

The InterFET N0016H Geometry is targeted for general purpose amplifiers, current limiters, regulators, and VCR applications.

The low input capacitance makes it ideal for mid-frequency applications.

Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters VRGS Reverse Gate to Source or Drain Voltage IFG Continuous Forward Gate Current TJ Operating Junction Temperature TSTG Storage Temperature Geometry Top View 16 G S-D S-D G Test Pattern Standard Parts • 2N3954, 2N3955, 2N3956 • 2N3957, 2N3958 • 2N4220/A, 2N4221/A, 2N4222/A • 2N4338, 2N4339 • 2N4340, 2N4341 • 2N4867/A, 2N4868/A, 2N4869/A • 2SK17, 2SK40 • 2SK59, 2SK105 • IFN17, IFN40 • IFN59, IFN105 • J201, J202, J203, J204 • J230, J231, J232 • J500, J501, J502, J503, J504, J505 • J506, J507, J508, J509, J510, J511 • J553, J554, J555, J556, J557 • U553, U554, U555, U556, U557 • VCR4N Min Typ Max Unit -50 -60 V 0.2 9 mA -0.8 -5.5 V 2200 μS Min Typ Max Unit -50 -60 V 10 mA -55 150 °C -65 175 °C Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions.

Overview

InterFET Product Folder Technical Support Order Now N0016H N0016H Process.

Key Features

  • Low Input Capacitance: 3.5pF Typical.
  • Low Gate Leakage: 10pA Typical.
  • High Breakdown Voltage: -60V Typical.
  • High Input Impedance.
  • Small Die: 391um X 391um X 203um.
  • Bond Pads: 90um X 90um.
  • Substrate Connected to Gate.
  • Au Back Side Finish.