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N0026S InterFET Process Geometry

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Description The InterFET N0026S Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View 26 G S-D S-D G Standard Parts • 2N4416, 2N4416A • 2N5484, 2N5485 • 2N5486 • J304, J305 • VCR11N Test Pattern Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current...
Features
• Low Input Capacitance: 4.3pF Typical
• Low Gate Leakage: 10pA Typical
• High Breakdown Voltage: -45V Typical
• High Input Impedance
• Small Die: 365um X 365um X 203um
• Bond Pads: 90um X 90um
• Substrate Connected to Gate
• Au Back-Side Finish Applications
• Small Signal Amplifier
• High Impedance Pre-Amplifier
• Voltage Controlled Resistors
• Cu...

Datasheet PDF File N0026S Datasheet - 873.24KB
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