N0026S - Process Geometry

Description

The InterFET N0026S Geometry is targeted high impedance low leakage applications.

The low input capacitance makes it ideal for higher frequency applications.

2N4416, 2N4416A 2N5484, 2N5485 2N5486 J304, J305

Features

Low Input Capacitance: 4.3pF Typical.
Low Gate Leakage: 10pA Typical.
High Breakdown Voltage: -45V Typical.
High Input Impedance.
Small Die: 365um X 365um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

InterFET

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Datasheet Details

Part number	N0026S
Manufacturer	InterFET
File Size	873.24 KB
Description	Process Geometry
Datasheet	N0026S Datasheet
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InterFET Product Folder Technical Support Order Now N0026S N0026S Process Geometry Features • Low Input Capacitance: 4.3pF Typical • Low Gate Leakage: 10pA Typical • High Breakdown Voltage: -45V Typical • High Input Impedance • Small Die: 365um X 365um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • Small Signal Amplifier • High Impedance Pre-Amplifier • Voltage Controlled Resistors • Custom Part Options Description The InterFET N0026S Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for higher frequency applications.

Published: Jun 13, 2020 |