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N0032H - Process Geometry

Description

The InterFET N0032H Geometry is targeted low leakage general purpose amplifiers.

The low input capacitance makes it ideal for higher frequency applications.

2N3821, 2N3822 2N3823, 2N3824 2N4222, 2N422

Features

  • Low Input Capacitance: 6.0pF Typical.
  • Low Gate Leakage: 10pA Typical.
  • High Breakdown Voltage: -60V Typical.
  • Small Die: 416um X 416um X 203um.
  • Bond Pads: 90um X 90um.
  • Substrate Connected to Gate.
  • Au Back-Side Finish.

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Datasheet Details

Part number N0032H
Manufacturer InterFET
File Size 357.05 KB
Description Process Geometry
Datasheet download datasheet N0032H Datasheet

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Full PDF Text Transcription

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InterFET Product Folder Technical Support Order Now N0032H N0032H Process Geometry Features • Low Input Capacitance: 6.0pF Typical • Low Gate Leakage: 10pA Typical • High Breakdown Voltage: -60V Typical • Small Die: 416um X 416um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • General Purpose Amplifier • Small Signal Amplifier • Custom Part Options Description The InterFET N0032H Geometry is targeted low leakage general purpose amplifiers. The low input capacitance makes it ideal for higher frequency applications.
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