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G4PC50F - IRG4PC50F

Key Features

  • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
G4PC50K IRG4PC50K
G4PC50U IRG4PC50U
G4PC50UD IRG4PC50UD
G4PC50W IRG4PC50W
G4PC30F INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD 91468C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC50F Fast Speed IGBT Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.