IRF1010NS mosfet equivalent, power mosfet.
V E R
400
TOP BOTTOM ID 18A 30A 43A
RG
V 2 0GS V
D .U .T
IA S tp
+ V - DD
300
A
0 .0 1 Ω
200
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
100
.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest powe.
l l
HEXFET® Power MOSFET
D
IRF1010NS IRF1010NL
VDSS = 55V RDS(on) = 11mΩ
G S
Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit.
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