IRF1404S Datasheet - International Rectifier

Power MOSFET

IRF1404S Features

* D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices Fig 14. For N-channel HEXFET® Power MOSFETs www.irf.com 7 IRF1404S/L D2Pak Package Outline D2Pak Part Marking Information THIS IS

IRF1404S General Description

® l l IRF1404S IRF1404L D VDSS = 40V G S RDS(on) = 0.004Ω ID = 162A Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg.

IRF1404S Datasheet (306.92 KB)

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IRF1404S

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International Rectifier

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306.92 KB

Description:

Power mosfet.
PD -93853C HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switc.

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IRF1404S Power MOSFET International Rectifier

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IRF1404S Features

IRF1404S General Description

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