50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current .

D RDS(on) = 0.165Ω G S ID = 9.6A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced proces.

D2Pak IRF520VS TO-262 IRF520VL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V ‡ Continuous Drain Current, VGS @ 10V ‡ Pulsed Drain Current ‡ Power .

IRF520V

IRF520VPBF

IRF520VS

IRF520

IRF520A

IRF520FI

IRF520L

IRF520N

IRF520NL

IRF520NLPBF

IRF520NPbF

IRF520NS

IRF520NSPBF