IRF520VS Power MOSFET

International Rectifier

Description

PD - 94306 HEXFET® Power MOSFET l l l l l l l IRF520VS IRF520VL VDSS = 100V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Ratin.
D2Pak IRF520VS TO-262 IRF520VL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Contin.

📥 Download Datasheet

IRF520VS Datasheet Preview — Preview of IRF520VS PDF

Datasheet Specifications

Part number: IRF520VS
Manufacturer: International Rectifier
File Size: 129.09 KB
Datasheet: IRF520VS_InternationalRectifier.pdf
Description: Power MOSFET

Features

* ower MOSFETs www. irf. com 7 IRF520VS/IRF520VL D2Pak Package Outline Dimensions are shown in millimeters (inches) 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14

Applications

* D RDS(on) = 0.165Ω G S ID = 9.6A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs

IRF520VS Distributors

📁 Related Datasheet

IRF520 IRF520A IRF520FI IRF520NL IRF520NS IRF520S

📌 All Tags

IRF520VS Power MOSFET International Rectifier

International Rectifier IRF520VS-like datasheet