IRF520VL Datasheet, Mosfet, International Rectifier

IRF520VL Features

• Mosfet 40 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Cur

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IRF520VL

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. D2Pak IRF520VS TO-262 IRF520VL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/

IRF520VL Application

• Applications D RDS(on) = 0.165Ω G S ID = 9.6A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques

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IRF520VL

International Rectifier

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