TJ = 25°C, L = 23mH RG = 25Ω, IAS = 0.54A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. † ISD ≤ 0.54A, di/dt ≤ 89A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Data and specifications s.

l High frequency DC-DC converters IRF5802 HEXFET® Power MOSFET RDS(on) max 1.2Ω@VGS = 10V ID 0.9A VDSS 150V Benefits .

IRF5800

IRF5800PBF

IRF5801

IRF5801PbF

IRF5801PBF-1

IRF5802PbF

IRF5803

IRF5803D2

IRF5803D2PbF

IRF5803PbF

IRF5804

IRF5804PbF

IRF5805