The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar s.

These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in ba.

IRF5800

IRF5800PBF

IRF5801

IRF5801PbF

IRF5801PBF-1

IRF5802

IRF5802PbF

IRF5803D2

IRF5803D2PbF

IRF5803PbF

IRF5804

IRF5804PbF

IRF5805