TE S : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 17 8.00 ( 7 .0 08 ) MAX. 9.9 0 ( .39 0 ) 8.4 0 ( .33 1 ) NO TES: 1. C O N T R O L LIN G D IM E .

D 1 6 A D D 2 5 D G 3 4 S T o p V ie w Micro6™ Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ T.

New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well .

IRF5800

IRF5800PBF

IRF5801

IRF5801PbF

IRF5801PBF-1

IRF5802

IRF5802PbF

IRF5803

IRF5803D2

IRF5803D2PbF

IRF5803PbF

IRF5804

IRF5804PbF