Datasheet Details
| Part number | IRF5851 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 575.89 KB |
| Description | Power MOSFET |
| Download | IRF5851 Download (PDF) |
|
|
Overview: l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge PD-93998B IRF5851 HEXFET® Power MOSFET G1 1 S2 2 6 D1 N-Ch VDSS 20V 5 S1 P-Ch -20V G2 3 4 D2 RDS(on) 0.090Ω 0.
| Part number | IRF5851 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 575.89 KB |
| Description | Power MOSFET |
| Download | IRF5851 Download (PDF) |
|
|
|
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required.
| Part Number | Description |
|---|---|
| IRF5851PbF | Power MOSFET |
| IRF5850 | Power MOSFET |
| IRF5852 | Power MOSFET |
| IRF5852PbF | Power MOSFET |
| IRF5800 | Power MOSFET |
| IRF5800PBF | Power MOSFET |
| IRF5801 | Power MOSFET |
| IRF5801PbF | Power MOSFET |
| IRF5801PBF-1 | Power MOSFET |
| IRF5802 | Power MOSFET |