Datasheet Summary
l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge
PD-93998B
HEXFET® Power MOSFET
G1 1 S2 2
6 D1
N-Ch
VDSS 20V
5 S1
P-Ch -20V
G2 3
4 D2 RDS(on) 0.090Ω 0.135Ω
Description
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per...