This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum .

These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery an.

IRF5850

IRF5851PbF

IRF5852

IRF5852PbF

IRF5800

IRF5800PBF

IRF5801

IRF5801PbF

IRF5801PBF-1

IRF5802

IRF5802PbF

IRF5803

IRF5803D2

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